ret y rt - low power loss, high efficiency - guardring for overvoltage protection - high surge current capability - halogen-free according to iec 61249-2-21 definition molding compound, ul flammability classification rating 94v-0 base p/n with suffix "g" on packing code - halogen-free terminal: matte tin plated leads, solderable per jesd22-b102 meet jesd 201 class 1a whisker test, v rrm 45 60 80 100 150 v v rms 31 42 56 70 105 v v dc 45 60 80 100 150 v i f(av) a i rrm a 0.7 0.77 0.95 0.6 0.67 0.92 0.82 - 1.02 0.73 - 0.98 0.1 15 10 5 dv/dt v/ s r jc o c/w t j o c t stg o c document number: ds_d1404002 version: a14 1.5 0.840.70 0.94 0.82 7.5 i r note 1: tp = 2.0 s, 1.0khz note 2: pulse test with pw=300 s, 1% duty cycle 1.0 0.2 typical thermal resistance 1.0 operating junction temperature range maximum instantaneous forward voltage (note 2) i f =15a, t j =25 i f =15a, t j =125 i f =30a, t j =25 i f =30a, t j =125 v f v - 55 to +150 storage temperature range - 55 to +150 ma voltage rate of change (rated v r ) 10000 maximum reverse current @ rated vr t j =25 t j =125 a peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load i fsm 200 a peak repetitive reverse surge current (note 1) 0.5 maximum dc blocking voltage maximum average forward rectified current 30 peak repetitive forward current (rated vr, square wave, 20khz) i frm 30 maximum repetitive peak reverse voltage maximum rms voltage mounting torque: 5 in-lbs maximum weight: 1.9 g (approximately) m ax i m u m rat i n gs an d elect ri cal ch aract eri st i cs (t a =25 unless otherwise noted) param et er sy m bol marking code m br3 0 8 0 ct -y mbr30 80ct mbr3045ct-y thru MBR30150CT-Y dual common cathode schottk y rectifier feat u res m br3 0 4 5 ct -y m br3 0 6 0 ct -y m br3 0 1 0 0 ct -y m br3 0 1 5 0 ct -y u n i t - compliant to rohs directive 2011/65/eu and in accordance to weee 2002/96/ec m ech an i cal dat a case: to-220ab polarity: as marked taiwan semiconductor to-220ab mbr30 45ct mbr30 60ct mbr30 100ct mbr30 150ct downloaded from: http:///
part n o. mbr30xxct-y part n o. mbr3060ct-y mbr3060ct-y (ta=25 unless otherwise noted) document number: ds_d1404002 version: a14 rat i n gs an d ch aract eri st i cs cu rv es mbr3060ct-y c0g c0 g preferred p/n pack i n g code green com pou n d mbr3060ct-y c0 c0 pack age c0 suffix "g" to-220ab note 1: "xx" defines voltage from 45v (mbr3045ct-y) to 150v (MBR30150CT-Y) ex am ple 50 / tube pack i n g green compound descri pt i on mbr3045ct-y thru MBR30150CT-Y taiwan semiconductor orderi n g i n form at i on pack i n g code green com pou n d code 0 5 10 15 20 25 30 35 0 50 100 150 average forward a current (a) case temperature ( o c) fig.1- forward current derating curve resistive or inductiveload with heatsink 0 50 100 150 200 250 300 1 10 100 peak forward surge current (a) number of cycles at 60 hz fig. 2- maximum non-repetitive forward surge current per leg 8.3ms single half sine wave jedec method 0.001 0.01 0.1 1 10 100 0 20 40 60 80 100 120 140 instantaneous reverse current (ma) percent of rated peak reverse voltage (%) fig. 4- typical reverse characteristics per leg tj=125 tj=25 tj=75 mbr3045ct-y mbr3060ct-y - 150ct-y 0.1 1 10 100 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 if-instantaneous forward current (a) forward voltage (v) fig. 3- typical instantaneous forward characteristics per leg mbr3045ct-y mbr3060ct-y mbr3080ct-y - 100ct-y MBR30150CT-Y downloaded from: http:///
min max min max a - 10.50 - 0.413 b 2.62 3.44 0.103 0.135 c 2.80 4.20 0.110 0.165 d 0.68 0.94 0.027 0.037 e 3.54 4.00 0.139 0.157 f 14.60 16.00 0.575 0.630 g 13.19 14.79 0.519 0.582 h 2.41 2.67 0.095 0.105 i 4.42 4.76 0.174 0.187 j 1.14 1.40 0.045 0.055 k 5.84 6.86 0.230 0.270 l 2.20 2.80 0.087 0.110 m 0.35 0.64 0.014 0.025 p/n = marking code g = green compound yww = date code f = factory code document number: ds_d1404002 version: a14 m ark i n g di agram mbr3045ct-y thru MBR30150CT-Y taiwan semiconductor pack age ou t li n e di m en si on s dim. unit (mm) unit (inch) 100 1000 10000 0.1 1 10 100 junction capacitance (pf) a reverse voltage (v) fig. 5- typical junction capacitance per leg f=1.0mhz vsig=50mvp-p mbr3045ct-y mbr3060ct-y mbr3080ct-y - 150ct-y 0.1 1 10 100 0.01 0.1 1 10 100 transient thermal impedance ( /w) t-pulse duration. (sec) fig. 6- typical transient thermal impedance per leg downloaded from: http:///
ret y rt assumes no responsibility or liability for any errors inaccuracies. information contained herein is intended to provide a product description only. no license, express or implied,to any intellectual property rights is granted by this document. except as provided in tsc's terms and conditions of sale for such products, tsc assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of tsc products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. the products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. customers using or seling these products for use in such applications do so at their own risk and agree to fully indemnify tsc for any damages resulting from such improper use or sale. document number: ds_d1404002 version: a14 mbr3045ct-y thru MBR30150CT-Y taiwan semiconductor n ot ic e specifications of the products displayed herein are subject to change without notice. tsc or anyone on its behalf, downloaded from: http:///
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